Manufacturer | Part # | Datasheet | Description |
Gunter Seniconductor Gm...
|
GFCC30 |
102Kb/1P |
N Channel Power MOSFET with low RDS(on) |
Bruckewell Technology L...
|
MS39P93 |
463Kb/6P |
Low rDS(on) provides higher efficiency and extends |
MS48N40 |
275Kb/4P |
Low rDS(on) provides higher efficiency and extends |
Leshan Radio Company
|
LP4935T1G |
385Kb/5P |
P-Channel MOSFET Low RDS(on) trench technology. |
Gunter Seniconductor Gm...
|
GFC440 |
103Kb/1P |
N Channel Power MOSFET with low RDS(on) |
First Silicon Co., Ltd
|
FTK7002T |
680Kb/5P |
High density cell design for low RDS(ON) |
Fairchild Semiconductor
|
FDMS3672 |
252Kb/7P |
N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm |
Gunter Seniconductor Gm...
|
GFC048 |
126Kb/1P |
N Channel Power MOSFET with extremely low RDS(on) |
GFC034 |
102Kb/1P |
N Channel Power MOSFET with extremely low RDS(on) |
GFC260 |
102Kb/1P |
N Channel Power MOSFET with extremely low RDS(ON) |
SamHop Microelectronics...
|
STC3116E |
97Kb/7P |
Super high dense cell design for low RDS(ON). |
STF8209 |
95Kb/6P |
Super high dense cell design for low RDS(ON). |
STF8236 |
109Kb/6P |
Super high dense cell design for low RDS(ON). |
STF8810 |
113Kb/7P |
Super high dense cell design for low RDS(ON). |
SDF05N50 |
195Kb/11P |
Super high dense cell design for low RDS(ON). |
STUD04N20 |
147Kb/10P |
Super high dense cell design for low RDS(ON). |
STUD419S |
129Kb/8P |
Super high dense cell design for low RDS(ON). |
STUD441S |
127Kb/8P |
Super high dense cell design for low RDS(ON). |
STUD449S |
129Kb/8P |
Super high dense cell design for low RDS(ON). |
STUD608S |
102Kb/8P |
Super high dense cell design for low RDS(ON). |