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REDUCED Datasheet, PDF

Search Description : 'REDUCED' - Total: 268 (1/14) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

Infineon Technologies A...
IPL65R190E6 Reduced board space consumption

Molex Electronics Ltd.
0462350003 Micro-Fit 3.0™ Reduced Mating Force, Crimp Terminal, Female, with 0.38μm (15μ") Selective Gold (Au) over Nickel (Ni), 26-30 AWG, without Lubricant

Micron Technology
MT49H16M18C 288Mb SIO REDUCED LATENCY(RLDRAM II)

Kemet Corporation
T528B277M002APE009 Tantalum, Polymer Tantalum, Reduced Volume, T528, 270 uF, 20%, 2 V, 3528, SMD, Polymer, Low ESR, NonCombustible, Face Down, 9 mOhms, Height Max = 2mm

Vishay Telefunken
SI4850EY N-Channel Reduced Fast Switching MOSFET

Molex Electronics Ltd.
0462355003 Micro-Fit 3.0 High Mating Cycle, Reduced Mating Force, Crimp Terminal, Female, with 0.38um

Vishay Siliconix
SI7384DP N-Channel Reduced Qg, Fast Switching MOSFET
SI9801DY N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge

PHOENIX CONTACT
1019724 Reduced logistics outlay, thanks to components which are compatible with one another

STMicroelectronics
STH240N75F3-2 Conduction losses reduced

Diodes Incorporated
SBR1045D1Q Reduced high temperature reverse leakage; increased reliability

Littelfuse
38211000000 Lead - free Reduced PCB space requirements Low internal resistance

Vishay Siliconix
SI4392DY N-Channel Reduced Qg, Fast Switching WFET

Kemet Corporation
T528Z227M006ATE009_17 Tantalum, Polymer Tantalum, Reduced Volume, T528, 220 uF, 20%, 6.3 V, 7343, SMD, Polymer, Low ESR, NonCombustible, Face Down, 9 mOhms, Height Max = 1.7mm

Vishay Siliconix
IRF830B Reduced capacitive switching losses

Littelfuse
V05E50P Reduced footprint and volume required for surge protection

Vishay Siliconix
SI4850EY_09 N-Channel Reduced Qg, Fast Switching MOSFET

ON Semiconductor
NB2969A Low Power, Reduced EMI Clock Synthesizer

Vishay Siliconix
SI4394DY N-Channel Reduced Qdg, Fast Switching WFET

Kemet Corporation
T529P106M010AAE200 Tantalum, Polymer Tantalum, Reduced Volume, T529, 10 uF, 20%, 10 V, 2012, SMD, Polymer, Substrate, 200 mOhms, Height Max= 1mm

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