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REVOLUTIONARY Datasheet, PDF

Search Description : 'REVOLUTIONARY' - Total: 74 (1/4) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

Infineon Technologies A...
SPP11N60C3_09 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPA11N80C3_08 CoolMOSTM Power Transistor Features New revolutionary high voltage technology
SPI11N60CFD New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
SPP02N60C3_07 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPP11N60CFD_07 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPB12N50C3_05 New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
SPB17N80C3_07 CoolMOS® Power Transistor Features new revolutionary high voltage technology
SPP11N60S5_09 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPP20N60C3_09 New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
SPW11N80C3_11 New revolutionary high voltage technology
SPW17N80C3_08 CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
SPP20N60CFD_09 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPP07N60S5_09 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPP20N65C3_07 New revolutionary high voltage technology Worldwide best RDS(on) in TO 220
IDW40G120C5B Revolutionary semiconductor material - Silicon Carbide
SPW11N80C3_08 New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
IPW50R250CP CoolMOSTM Power Transistor Features New revolutionary high voltage technology
SPB02N60S5_07 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPP12N50C3_07 New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
IDW30G120C5B Revolutionary semiconductor material - Silicon Carbide

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