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RDS ON Datasheet, PDF

Search Description : 'RDS ON ' - Total: 1358 (1/68) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

SeCoS Halbleitertechnol...
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET

International Rectifier
IRFZ24N Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
IRF5YZ48CM POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)

SeCoS Halbleitertechnol...
SDT3A5N06-C 3.5A, 60V, RDS(on) 100 m(ohm) N-Channel Enhancement Mode Power MOSFET

SamHop Microelectronics...
SDUD03N50 Super high dense cell design for low RDS(ON).

International Rectifier
IRHN2C50SE TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRF9510 Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

Motorola, Inc
MTD3N25E TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

SamHop Microelectronics...
STF620S Super high dense cell design for low RDS(ON).

International Rectifier
JANTX2N6800 POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)
IRFD420 Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=0.37A)

Motorola, Inc
MTW32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

SamHop Microelectronics...
STS3409L Super high dense cell design for low RDS(ON).

International Rectifier
IRF1104PBF HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009Ω , ID = 100A )

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