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RDS ON Datasheet, PDF

Search Description : 'RDS ON ' - Total: 1358 (1/68) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

SeCoS Halbleitertechnol...
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET

International Rectifier
IRF4905S Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

SamHop Microelectronics...
STUD5025NL2 Super high dense cell design for low RDS(ON).

SeCoS Halbleitertechnol...
SSD55N03_11 55A, 25V, RDS(ON) 6m N-Ch Enhancement Mode Power MOSFET

International Rectifier
IRFR9220 Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A)
IRF5NJ540 POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)

Kersemi Electronic Co.,...
KMB9540 Advanced high cell denity trench technology for ultra RDS(ON)

SeCoS Halbleitertechnol...
STT6802 3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET

International Rectifier
IRFR9N20D Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)
IRF7452 Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)

Kersemi Electronic Co.,...
KSM740 Advanced high cell denity trench technology for ultra RDS(ON)

Fairchild Semiconductor
FQB34P10TM-F085 -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V

International Rectifier
IRFZ44VS Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)
IRF830AS Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)

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