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SYSTEM INTERACTIVE MHZ Datasheet, PDF

Agilent(Hewlett-Packard)(16)Fair-Rite Products Corp.(39)Fairchild Semiconductor(34)Faraday Technology(5)FCI connector(12)FOSLINK SEMICONDUCTOR CO.,LTD(2)Freescale Semiconductor, Inc(87)Frequency Devices, Inc.(2)FSP TECHNOLOGY INC.(2)Fuji Electric(4)Fujitsu Component Limited.(26)Gamewell-FCI by Honeywell(7)Gennum Corporation(7)GHz Technology(63)Glenair, Inc.(17)Global Mixed-mode Technology Inc(9)Golledge Electronics Ltd(30)Grayhill, Inc(4)Hamamatsu Corporation(5)Hammond Manufacturing Ltd.(1)Harris Corporation(13)HBH Microwave GmbH(7)Hirose Electric(11)Hitachi Metals, Ltd(26)Hitachi Semiconductor(33)Hittite Microwave Corporation(132)Holt Integrated Circuits(7)Holtek Semiconductor Inc(2)Honeywell Accelerometers(34)Honeywell Solid State Electronics Center(35)HuaXinAn Electronics CO.,LTD(8)Humirel(2)HVVi Semiconductors, Inc.(8)Hynix Semiconductor(6)IC MICROSYSTEMS(3)Inchange Semiconductor Company Limited(1)Infineon Technologies AG(333)Innovative Power Products, Inc.(5)Integrated Circuit Solution Inc(1)Integrated Circuit Systems(233)Integrated Device Technology(56)Integrated Silicon Solution, Inc(3)Integrated Technology Future(320)Intel Corporation(17)International Rectifier(10)Interpoint Corporation Company(1)Intersil Corporation(43)Intronics Power, Inc.(1)Ironwood Electronics.(1)Isahaya Electronics Corporation(1)ITT Industries(8)IXYS Corporation(9)Japan Aviation Electronics Industry, Ltd.(1)JDS Uniphase Corporation(3)JFW Industries, Inc.(64)JMK Inc.(1)Johanson Technology Inc.(120)Quanzhou Jinmei Electronic Co.,Ltd.(86)
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Search Description : 'SYSTEM INTERACTIVE MHZ ' - Total: 333 (1/17) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

Infineon Technologies A...
PTF180101S LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz
PTFA210451E Thermally-Enhanced High Power RF LDMOS FETs 45 W, 20102025 MHz and 21102170 MHz
PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 18801920 MHz, 20102025 MHz
IGCM04G60HA_16 Control Integrated POwer System
TLE7263E Integrated HS-CAN, LIN, LDO and HS Switch System Basis Chip
IKCM20L60HD_16 Control Integrated POwer System
IGCM04B60GA_16 Control Integrated POwer System
BGA734L16 Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz)
PTMC210204MD Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 18052200 MHz
TDK5111 ASK/FSK Transmitter 315 MHz
PTFA220041M_16 High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 7002200 MHz
IKCM20L60HA_16 Control Integrated POwer System
PTFA181001E Thermally-Enhanced High Power RF LDMOS FETs 100 W, 18051880 MHz
IKCM15L60GA_15 Control Integrated POwer System
TLF50251ELV50 2.2 MHz Step-Down Regulator 500 mA, 5 V, low quiescent current
PTFB241402F_16 High Power RF LDMOS Field Effect Transistor 140 W, 23002400 MHz
IFX90121ELV50_18 2.2 MHz Step-Down Regulator 500 mA, 5 V, low quiescent current

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