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SYSTEM INTERACTIVE MHZ Datasheet, PDF

Agilent(Hewlett-Packard)(16)Fair-Rite Products Corp.(39)Fairchild Semiconductor(34)Faraday Technology(5)FCI connector(12)FOSLINK SEMICONDUCTOR CO.,LTD(2)Freescale Semiconductor, Inc(87)Frequency Devices, Inc.(2)FSP TECHNOLOGY INC.(2)Fuji Electric(4)Fujitsu Component Limited.(26)Gamewell-FCI by Honeywell(7)Gennum Corporation(7)GHz Technology(63)Glenair, Inc.(17)Global Mixed-mode Technology Inc(9)Golledge Electronics Ltd(30)Grayhill, Inc(4)Hamamatsu Corporation(5)Hammond Manufacturing Ltd.(1)Harris Corporation(13)HBH Microwave GmbH(7)Hirose Electric(11)Hitachi Metals, Ltd(26)Hitachi Semiconductor(33)Hittite Microwave Corporation(132)Holt Integrated Circuits(7)Holtek Semiconductor Inc(2)Honeywell Accelerometers(34)Honeywell Solid State Electronics Center(35)HuaXinAn Electronics CO.,LTD(8)Humirel(2)HVVi Semiconductors, Inc.(8)Hynix Semiconductor(6)IC MICROSYSTEMS(3)Inchange Semiconductor Company Limited(1)Infineon Technologies AG(333)Innovative Power Products, Inc.(5)Integrated Circuit Solution Inc(1)Integrated Circuit Systems(233)Integrated Device Technology(56)Integrated Silicon Solution, Inc(3)Integrated Technology Future(320)Intel Corporation(17)International Rectifier(10)Interpoint Corporation Company(1)Intersil Corporation(43)Intronics Power, Inc.(1)Ironwood Electronics.(1)Isahaya Electronics Corporation(1)ITT Industries(8)IXYS Corporation(9)Japan Aviation Electronics Industry, Ltd.(1)JDS Uniphase Corporation(3)JFW Industries, Inc.(64)JMK Inc.(1)Johanson Technology Inc.(120)Quanzhou Jinmei Electronic Co.,Ltd.(86)
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Search Description : 'SYSTEM INTERACTIVE MHZ ' - Total: 333 (1/17) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

Infineon Technologies A...
PTF180101S LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz
PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 18801920 MHz, 20102025 MHz
PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
PTFA210451E Thermally-Enhanced High Power RF LDMOS FETs 45 W, 20102025 MHz and 21102170 MHz
PTFA180701E Thermally-Enhanced High Power RF LDMOS FETs 70 W, 18051880 MHz
PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 21102170 MHz
IKCM30F60HD_16 Control Integrated POwer System
PTFA241301FV1 Thermally-Enhanced High Power RF LDMOS FETs 130 W, 24202480 MHz
PTFA091503EL Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz
IKCM20L60HD_16 Control Integrated POwer System
IKCM30F60GD_16 Control Integrated POwer System
IKCM10B60GA_15 Control Integrated POwer System
IFCM30T65GD Control Integrated POwer System
TLE9261-3QXV33 Mid-Range System Basis Chip Family
PTFA210601E Thermally-Enhanced High Power RF LDMOS FETs 60 W, 21102170 MHz
IFX90121ELV50_18 2.2 MHz Step-Down Regulator 500 mA, 5 V, low quiescent current
IGCM06G60HA_15 Control Integrated POwer System
PXAC213308FV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 21102200 MHz

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