Manufacturer | Part # | Datasheet | Description |
Shenzhen Huazhimei Semi...
|
HM4N65 |
468Kb/9P |
SL semi advanced planar stripe DMOS technology. |
HM60N75K |
605Kb/6P |
Special process technology for high ESD capability |
HM60N06K |
628Kb/6P |
Special process technology for high ESD capability |
HM60N06 |
510Kb/6P |
Special process technology for high ESD capability |
HM4N65K |
840Kb/9P |
SL semi advanced planar stripe DMOS technology. |
HM5N65 |
449Kb/9P |
SL semi`s advanced planar stripe DMOS technology. |
HM4N60K |
758Kb/9P |
SL semi?쁲 advanced planar stripe DMOS technology. |
HM5N60K |
680Kb/9P |
SL semi?쁲 advanced planar stripe DMOS technology. |
HM4010 |
358Kb/5P |
Built-in PWM generator and power stage technology |
HM5N65K |
891Kb/9P |
SL sem`s advanced planar stripe DMOS technology. |
HM74HC245 |
1Mb/9P |
high-speed CMOS 8-bit bus transceiver using silicon gate technology. |
HM603BK |
938Kb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM609BK |
2Mb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM4021 |
641Kb/9P |
Built-in power stage with low-resistance NMOS FET technology ensures high efficiency and low power consumption |
HM4011 |
563Kb/7P |
Built-in power stage with low-resistance NMOS FET technology ensures high efficiency and low power consumption |
HM4022 |
449Kb/9P |
Built-in power stage with low-resistance NMOS FET technology ensures high efficiency and low power consumption |
HM1P10MR |
763Kb/5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |