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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 9 (1/1) Pages
ManufacturerPart #DatasheetDescription
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Powersem GmbH
PSTG50HST Datasheet pdf image
143Kb/2P
Powerline N-Channel Trench Gate-IGBT Module
PSTG75HST Datasheet pdf image
152Kb/2P
Powerline N-Channel Trench Gate-IGBT Module
PSTG25HDT12 Datasheet pdf image
129Kb/2P
Powerline N-Channel Trench Gate-IGBT Module
PSTG75HST12 Datasheet pdf image
147Kb/2P
Powerline N-Channel Trench Gate-IGBT Module
PSTG50HST12 Datasheet pdf image
143Kb/2P
Powerline N-Channel Trench Gate-IGBT Module
PSTG25HTT Datasheet pdf image
219Kb/2P
Powerline N-Channel Trench Gate-IGBT Module
PSTG25HDT Datasheet pdf image
129Kb/2P
Powerline N-Channel Trench Gate-IGBT Module
PSTG25HTT12 Datasheet pdf image
219Kb/2P
Powerline N-Channel Trench Gate-IGBT Triple Module
PSTG25HTT Datasheet pdf image
219Kb/2P
Powerline N-Channel Trench Gate- IGBT Triple Module

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What is TRENCH


Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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