TRENCH Datasheet(PDF) - S-LPB8619DT0AG - Leshan Radio Company

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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 46 (2/3) Pages

Manufacturer	Part #	Datasheet	Description
Leshan Radio Company	S-LPB8619DT0AG	524Kb/6P	P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
	LP4435T1G	591Kb/5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
	LPB2680LT1G	912Kb/5P	P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
	LN7266DT1WG	549Kb/6P	N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
	LN3432LT1G	875Kb/5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNA7350DT1WG	1Mb/5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB8308DT0AG	472Kb/6P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB8410DT0AG	2Mb/3P	N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
	S-LN3432LT1G	880Kb/5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LP4565T1G	393Kb/3P	P-Channel 60-V (D-S) MOSFET Low rDS(on) trench technology
	LPB8337DT0AG	626Kb/6P	P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LPB8615DT0AG	269Kb/5P	P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
	S-LNB8340DT1AG	846Kb/5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LN7402DT1WG	1Mb/5P	N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology
	LP4437T1G	495Kb/5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
	LNB8350DT0AG	2Mb/3P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB83028DT0AG	582Kb/5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LP4407T1G	441Kb/5P	P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LN7466DT1WG	1Mb/5P	N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology
	LN4404T1G	307Kb/5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology

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What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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