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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 110 (4/6) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Fairchild Semiconductor
FDMS36101L_F085 Datasheet pdf image
N-Channel Power Trench MOSFET 100V, 38A, 26m
FGH40T70SHD Datasheet pdf image
700 V, 40 A Field Stop Trench IGBT
FGA6560WDF Datasheet pdf image
650 V, 60 A Field Stop Trench IGBT
Rev. 1.1 April 2015
FDMC2610 Datasheet pdf image
N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm)
FGH50T65UPD Datasheet pdf image
650 V, 50 A Field Stop Trench IGBT
FDD16AN08A0 Datasheet pdf image
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?
FDMC8878 Datasheet pdf image
N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm
FDMS2672 Datasheet pdf image
N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm
FGA3060ADF Datasheet pdf image
600 V, 30 A Field Stop Trench IGBT
FDMC8554 Datasheet pdf image
N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm
FDS2572 Datasheet pdf image
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
FDMC2674 Datasheet pdf image
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m廓
FDS5692Z Datasheet pdf image
N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24m Ohm
FDMC2674 Datasheet pdf image
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m廓
FDA2712 Datasheet pdf image
N-Channel UltraFET Trench MOSFET 250V, 64A, 34m廓
FDD5810-F085 Datasheet pdf image
N-Channel Logic Level Trench MOSFET 60V, 36A, 27m
FDD3672 Datasheet pdf image
N-Channel UltraFET Trench MOSFET 100V, 44A, 28m廓
ISL9N302AP3 Datasheet pdf image
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N310AP3 Datasheet pdf image
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N312AD3 Datasheet pdf image
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

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What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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