Manufacturer | Part # | Datasheet | Description |
Shenzhen Huazhimei Semi...
|
HMG40N65T |
753Kb/4P |
650V 40A trench gate field cut-off type IGBT |
HM603BK |
938Kb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM609BK |
2Mb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM1P10MR |
763Kb/5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |