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FM RDS Datasheet, PDF

Search Description : 'FM RDS ' - Total: 1405 (1/71) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

SeCoS Halbleitertechnol...
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

Motorola, Inc
MTSF3N03HD SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM

SamHop Microelectronics...
STP60L60F Super high dense cell design for low RDS(ON).

International Rectifier
IRLR3103 Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A⑤)
IRFBC30 Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

Motorola, Inc
MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

SamHop Microelectronics...
SP8608 Super high dense cell design for low RDS(ON).

International Rectifier
IRFZ44VZ Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)
IRF7456 Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A)

Kersemi Electronic Co.,...
KSM830 Advanced high cell denity trench technology for ultra RDS(ON)

Advanced Monolithic Sys...
AMS2306 Super high density cell design for extremely low RDS(ON)

International Rectifier
IRFP450LC Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)

Kersemi Electronic Co.,...
KSM6N65 Advanced high cell denity trench technology for ultra RDS(ON)

SeCoS Halbleitertechnol...
SMG2391P -0.9A , -150V , RDS(ON) 1.2 P-Channel Enhancement Mode MOSFET

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