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GBIT SEC Datasheet, PDF

Search Description : 'GBIT SEC ' - Total: 64 (1/4) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

STMicroelectronics
NAND04GW3B2B 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND01G-B2B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

List of Unclassifed Man...
1803D Selectable gate times 0.1 sec and 1.0 sec

Numonyx B.V
NAND04GW3B2B 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND04G-B2D 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

STMicroelectronics
NAND01G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

RHOPOINT COMPONENTS
29393 0.5 sec response time, 100Ω pipe clamp fitting RTD

Toshiba Semiconductor
TC58NVG1S3ETA00 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

Cypress Semiconductor
S34MS01G2 1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded

List of Unclassifed Man...
SD501 3 SEC VOICE SYNTHESIZER

Aplus Intergrated Circu...
AP8821 21 sec VOICE OTP

Vectron International, ...
QF6-994-0280-06 vibration: 9.8 g, 20-2000 Hz, duration 60 sec. each axis.

Maxwell Technologies
72SD3232B 1 Gbit SDRAM

Aplus Intergrated Circu...
IVR2104 aIVR2104 – 21 sec

celduc-relais
AD223540 NORMALEMENT OUVERT, CONTACT SEC

Hynix Semiconductor
H27U4G8F2D 4 Gbit (512M x 8 bit) NAND Flash

Toshiba Semiconductor
TC58NYG1S3EBAI5 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM

Cypress Semiconductor
S70GL02GS 2 Gbit (256 MBytes), 3.0 V Flash Memory

Total Power Internation...
PBA-600F 40/40typ (Io=100%) (Primary inrush current /Secondary inrush current) (More than 3 sec. to re-start)

Cypress Semiconductor
S70GL02GP 2 Gbit, 3V Page Mode S70GL-P MirrorBit® Flash

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