Electronic Manufacturer | Part Number | Datasheet | Electronics Description |

Texas Instruments
|
SN74ACT2227 |
 |
DUAL 64 × 1, DUAL 256 × 1 FIRST-IN, FIRST-OUT MEMORIES |

ATMEL Corporation
|
AT90CAN128_14 |
 |
Non volatile Program and Data Memories |

Texas Instruments
|
TMS27PC512-20NL |
 |
TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |

List of Unclassifed Man...
|
TMS320C6000 |
 |
Interface with synchronous dynamic memories |

Texas Instruments
|
TMS2716 |
 |
2048-WORD BY 8-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES |
TMS29F800T |
 |
1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES |
TMS27C512-150JL |
 |
8-BIT PROGRAMMABLE READ-ONLY MEMORIES |

Numonyx B.V
|
M58PR512LE |
 |
512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |

STMicroelectronics
|
M25PE20 |
 |
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out |

ATMEL Corporation
|
SAM9G10_14 |
 |
Additional Embedded Memories |

STMicroelectronics
|
ST75C530 |
 |
SUPER INTEGRATED DEVICESWITH DSP, AFE & MEMORIES FORTELEPHONY,MODEM, FAXOVERINTERNET& POTSLINES |

Numonyx B.V
|
NAND04G-B2D |
 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |

STMicroelectronics
|
M58LR128HT |
 |
128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories |

Texas Instruments
|
TMS45160 |
 |
262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES |
TMS44400_1998 |
 |
1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |

ATMEL Corporation
|
ATMEGA169_14 |
 |
Non-volatile Program and Data Memories |
ATXMEGA128A4_14 |
 |
Non-volatile Program and Data Memories |

Texas Instruments
|
TMS27C240-15JL |
 |
16-BIT PROGRAMMABLE READ-ONLY MEMORIES |
JBP18S030 |
 |
256 BITS (32 WORDS BY 8 BITS) PROGRAMMABLE READ-ONLY MEMORIES |

NXP Semiconductors
|
HEF4720B |
 |
256-bit, 1-bit per word random access memories |