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RDS Datasheet, PDF

Search Description : 'RDS' - Total: 1388 (1/70) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

SeCoS Halbleitertechnol...
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET

International Rectifier
IRFI644G Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

Motorola, Inc
MTP23P06V TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM

SamHop Microelectronics...
STK900 Super high dense cell design for low RDS(ON).

International Rectifier
JANTX2N6784 POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A)
IRFB38N20D Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)

Leshan Radio Company
S-LN3432LT1G N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.

SamHop Microelectronics...
SP3906 Super high dense cell design for low RDS(ON).

International Rectifier
IRHM7360SE TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)
IRF640 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Kersemi Electronic Co.,...
KSM3103 Advanced high cell denity trench technology for ultra RDS(ON)

SeCoS Halbleitertechnol...
SSPS7330N 11 A , 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET

International Rectifier
IRFPC50LC Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
IRF130 TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

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