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RDS Datasheet, PDF

Search Description : 'RDS' - Total: 1350 (1/68) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

SeCoS Halbleitertechnol...
SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
STT3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SSG4520H_12 N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SST3585_12 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
STT6802 3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET

International Rectifier
IRFR9N20D Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)
IRF820S Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

Renesas Technology Corp
ISL6307 6-Phase PWM Controller with 8 Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current

SamHop Microelectronics...
SP07N65 Super high dense cell design for low RDS(ON).

International Rectifier
IRHNA7360SE TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
IRFBC30 Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

Motorola, Inc
MTP10N40E TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

SamHop Microelectronics...
STF8209 Super high dense cell design for low RDS(ON).

International Rectifier
IRFR014 Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
IRFIBC30G Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

Motorola, Inc
MTV16N50E TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

SamHop Microelectronics...
STS6308 Super high dense cell design for low RDS(ON).

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